Abstract
We present analytical expressions for the D’yakonov-Perel’ spin relaxation rates under the combined action of bulk and structural inversion asymmetry for [111] zincblende heterostructures when terms up to linear and third order in k are included in the Hamiltonian. We see for [111] heterostructures that, under the right conditions, the lowest-order-in-k component of the spin relaxation tensor can be made to vanish for all spin components at the same time. We study how the inclusion of terms of higher order in k affects these results. We finally discuss a proposal for a resonant spin lifetime transistor (RSLT) using the spin lifetime tuning concepts presented above, where the characteristics of the [111] device give the designer an added degree of freedom on the direction of the injected spins.
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Acknowledgments
The authors thank Dr. Stuart Wolf for helpful discussions. This work was supported in part by Defense Advanced Research Projects Agency (DARPA) under Contracts No. MDA972-01-C-0002 and No. DAAD19-01-1-0324. A part of this work was carried out at the Jet Propulsion Laboratory, California Institute of Technology, through an agreement with the National Aeronautics and Space Administration.
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Cartoixà, X., Ting, D.ZY. & Chang, YC. Spin Lifetime Tuning in Zincblende Heterostructures and Tions to Spin Devices. MRS Online Proceedings Library 825, 66 (2004). https://doi.org/10.1557/PROC-825-G6.6
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DOI: https://doi.org/10.1557/PROC-825-G6.6