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Selective Voltage-Controlled Hole Spin in Non-Magnetic Resonant Tunneling Diodes

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Abstract

We report theoretical and experimental observation of photoexcitated hole spin selection in GaAs/GaAlAs n-i-n in resonant tunneling diodes. When subjected to magnetic and electric parallel fields, the spin splitted hole levels leads to several peak structure in the transmissivity. These experimental results are interpreted as an evidence of tunneling transport through spin polarized hole levels of non-magnetic diodes.

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Authors and Affiliations

  1. Departamento de Física, Universidade Federal do Amazonas, 67.077-000, Manaus, Amazonas, Brazil

    A. C. R. Bittencourt

  2. Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil

    G. E. marques, Y. Galvão Gobato, A. Vercik & I. Camps

  3. Universidade Federal de Santa Catarina, Florianópolis, SC, Brazil

    Y. Galvão Gobato

  4. Departemento de Ciências Básicas, Faculdade de Zootecnia e Engenharia de Alimentos, Pirassununga, 13635-900, SP, Brazil

    A. Vercik

  5. Grupo de Propriedades Ópticas, Instituto de Física Gleb Wataghin, Universidade de Campinas, 13083-970, Campinas, SP, Brazil

    M. J. S. P Brasil

Authors
  1. A. C. R. Bittencourt
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  2. G. E. marques
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  3. Y. Galvão Gobato
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  4. A. Vercik
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  5. I. Camps
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  6. M. J. S. P Brasil
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Bittencourt, A.C.R., marques, G.E., Gobato, Y.G. et al. Selective Voltage-Controlled Hole Spin in Non-Magnetic Resonant Tunneling Diodes. MRS Online Proceedings Library 825, 510 (2004). https://doi.org/10.1557/PROC-825-G5.10

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  • DOI: https://doi.org/10.1557/PROC-825-G5.10

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