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Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV

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Abstract

In this paper, we first propose an improved CVD-WSix metal gate suitable for use with nMOSFETs. Work function of CVD-WSi3.9 gate estimated from C-V measurements was 4.3eV. The nMOSFET using CVD-WSi3.9 gate electrode showed that Vth variation of L/W=1 μm/10μm nMOSFETs can be suppressed to be lower than 8mV in 22chip. In CVD-WSi3.9 gate MOSFETs with gate length of 50nm, a drive current of 636μA/μm was achieved for off-state leakage current of 35nA/μm at 1.0V of power supply voltage. By using CVD-WSi3.9 gate electrode, highly reliable metal gate nMOSFETs can be realized.

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Authors and Affiliations

  1. Process and Manufacturing Engineering Center, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan

    Kazuaki Nakajima, Hiroshi Nakazawa, Katsuyuki Sekine, Kouji Matsuo, Tomohiro Saito, Tomio Katata, Kyoichi Suguro & Yoshitaka Tsunashima

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  1. Kazuaki Nakajima
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  2. Hiroshi Nakazawa
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  3. Katsuyuki Sekine
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  4. Kouji Matsuo
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  5. Tomohiro Saito
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  6. Tomio Katata
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  7. Kyoichi Suguro
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  8. Yoshitaka Tsunashima
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Correspondence to Kazuaki Nakajima.

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Nakajima, K., Nakazawa, H., Sekine, K. et al. Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV. MRS Online Proceedings Library 811, 272–277 (2003). https://doi.org/10.1557/PROC-811-D4.2

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  • DOI: https://doi.org/10.1557/PROC-811-D4.2

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