Abstract
Single crystal Ge nanowires (NWs) were obtained in high yield by gas phase decomposition of germanium di-cyclopentadienylide ([Ge(C5H5)2]), at 325 °C on iron substrates. High-resolution electron microscopy (SEM/TEM) showed Ge NWs to be uniform in terms of diameter (20 nm) and length (> 25 µm). The wire growth is selective and appears to be governed by a Ge-Fe alloy epilayer formed by the reaction between Ge clusters and iron substrate, during the initial stages of the CVD process. The supersaturation of Ge-Fe solid-solution with respect to Ge content induces the spontaneous formation of single crystal germanium nuclei that act as templates for the nanowire growth. X-ray and electron diffraction revealed the NWs to be single crystals of cubic germanium with a preferred growth direction [11-2]. The proposed base-growth model on Fe substrate is supported by TEM, EDX and XPS studies.
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Acknowledgement
Authors are thankul to the German Science Foundation (DFG) for the financial assistance. S.M. is thankful to Prof. M. Veith and Prof. H. Schmidt for providing the necessary infrastructural facilities.
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Mathur, S., Shen, H. & Werner, U. Low Temperature Gas Phase Synthesis of Germanium Nanowires. MRS Online Proceedings Library 789, 181–186 (2003). https://doi.org/10.1557/PROC-789-N15.38
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DOI: https://doi.org/10.1557/PROC-789-N15.38