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Ion Implantation and Annealing of Oxides

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Abstract

Ion implantation damage and annealing results are presented for a number of crystalline oxides. In A12 O3, the amorphous phase produced by ion bombardment of the pure material first crystallizes in the (crystalline) γ phase. This is followed by the transformation of γ-Al2 O3 to α-A12O3 at a well defined interface. The activation energy for the growth of α alumina from γ is 3.6 eV/atom. In CaTiO3, the implantation-induced amorphous phase transforms to the crystalline phase by solid-phase epitaxy (SPE). ZnO is observed to remain crystalline even after high implantation doses at liquid nitrogen temperatures. The near surface of KTaO3 is transformed to a polycrystalline state after implantation at room temperature or liquid nitrogen temperature.

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Authors and Affiliations

  1. Oak Ridge National Laboratory, TN, 37831, Oak Ridge, USA

    C. W. White, L. A. Boatner, P. S. Sklad, C. J. Mchargue & S. J. Pennycook

  2. Harvard University, MA, 02138, Cambridge, USA

    M. J. Aziz

  3. Wright State University, OH, 45435, Dayton, USA

    G. C. Farlow

  4. Massachusetts Institute of Technology, MA, 02139, Cambridge, USA

    J. Rankin

Authors
  1. C. W. White
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  2. L. A. Boatner
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  3. P. S. Sklad
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  4. C. J. Mchargue
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  5. S. J. Pennycook
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  6. M. J. Aziz
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  7. G. C. Farlow
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  8. J. Rankin
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Additional information

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

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White, C.W., Boatner, L.A., Sklad, P.S. et al. Ion Implantation and Annealing of Oxides. MRS Online Proceedings Library 74, 357 (1986). https://doi.org/10.1557/PROC-74-357

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  • DOI: https://doi.org/10.1557/PROC-74-357

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