Abstract
Cu may diffuse into the active areas of semiconductors resulting in degradation of the devices. Therefore Cu is isolated from silicon wafers by barrier layers. In this study, copper films were deposited onto silicon substrates coated using polycrystalline Ta3N5 and amorphous α-C:H barrier by the partially ionized beam deposition technique at 6 kV bias, to investigate an influence of barrier layer structure on texture and microstructure of Cu films. After deposition, films were annealed under vacuum. Texture of the films was studied by X-ray diffraction and further microstructural analysis of the copper films was performed by orientation imaging microscopy. Results of the structural analysis reveal large (100) grains in films deposited on α-C:H barrier layer and a bi-modal texture in films on Ta3N5.
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Kononenko, O.V., Matveev, V.N., Vasiliev, A.G. et al. Texture and microtexture of copper films prepared by the self-ion assisted deposition technique on barrier layers with different structure. MRS Online Proceedings Library 721, 35 (2002). https://doi.org/10.1557/PROC-721-J3.5
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DOI: https://doi.org/10.1557/PROC-721-J3.5