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Interfacial Contributions to Magnetostriction of Ferromagnetic Layers for Magnetoresistive Sensors

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We have experimentally measured magnetostriction of thin CoFe layers when deposited with various seed and capping layers. Seed and capping layers were chosen to be materials that may be used in spin-valve (SV) type structures. Materials deposited adjacent to the magnetic layer include Cu, Ta and TaN. The experimental results are interpreted using a model that allows separation of bulk and interface contributions to the measured magnetostriction [1].Results show a clear interfacial contribution that is dependent upon the material at the interface of the magnetic layer. The results demonstrate that surface contributions to the magnetostriction dominate as layer thickness decreases.

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  1. Seagate Technology 7801 Computer Avenue South Minneapolis, MN, 55435-5489, USA

    E. W. Singleton & K. J. Duxstad

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  1. E. W. Singleton
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  2. K. J. Duxstad
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Singleton, E.W., Duxstad, K.J. Interfacial Contributions to Magnetostriction of Ferromagnetic Layers for Magnetoresistive Sensors. MRS Online Proceedings Library 721, 69 (2002). https://doi.org/10.1557/PROC-721-E6.9

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  • DOI: https://doi.org/10.1557/PROC-721-E6.9

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