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Electrical Property of Vertically Grown Carbon Nanotube and its Application to the Nanofunctional Devices

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Abstract

A highly ordered porous alumina array which hole size is decreased down to 20nm was fabricated by a two step anodization method. Carbon Nanotube was grown vertically with thermal CVD at 600∼700 °C. By using rapid thermal annealing method, low-ohmic contact was formed between multi wall nanotubes and metal electrode and its resistance shows tens to hundreds Ω. The alumina layer which is existed between nanotube and electrode acts as a barrier for conductance. The resistance of carbon nanotube shows the temperature(T-1) dependence at 4.21K < T < 19.9K and semiconducting behavior at this temperature region.

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Authors and Affiliations

  1. The National Program for Tera-Level Nanodevices, Samsung Advanced Institute of Technology, Suwon, Korea

    Jaeuk Chu, Kwangseok Jeong & Eunju Bae

  2. Materials and Devices Lab, Samsung Advanced Institute of Technology, Suwon, Korea

    Inkyeong Yoo & Wonbong Choi

  3. Department of Physics, Chonbuk National University, Chonju, 561-756, Korea

    Jujin Kim

Authors
  1. Jaeuk Chu
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  2. Kwangseok Jeong
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  3. Eunju Bae
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  4. Inkyeong Yoo
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  5. Wonbong Choi
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  6. Jujin Kim
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Chu, J., Jeong, K., Bae, E. et al. Electrical Property of Vertically Grown Carbon Nanotube and its Application to the Nanofunctional Devices. MRS Online Proceedings Library 675, 931 (2001). https://doi.org/10.1557/PROC-675-W9.3.1

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  • DOI: https://doi.org/10.1557/PROC-675-W9.3.1

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