Simulations of molecular beam epitaxy growth of GaAs

MRS Online Proceedings Library volume 648, Article number: 53 (2000) Cite this article

Abstract

Numerical simulations have been performed for generic III-V MBE growth. The key aspects of the simulation include two deposited species one volatile and the second with high surface mobility. Simulations reproduce the experimentally observed adatom concentrations for GaAs and show that smooth surfaces are produced for films deposited with a substrate temperature in a crossover regime between kinetically limited and entropically roughened growth.

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Affiliations

  1. Physics Department, The University of Michigan, Ann Arbor, MI, 48109-1120, USA

    Z. Zhang & B. G. Orr

Authors
  1. Z. Zhang
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  2. B. G. Orr
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Correspondence to Z. Zhang.

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Zhang, Z., Orr, B.G. Simulations of molecular beam epitaxy growth of GaAs. MRS Online Proceedings Library 648, 53 (2000). https://doi.org/10.1557/PROC-648-P5.3

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