Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si,1-x-yGexCy Thin Films on Si(100) Substrate

MRS Online Proceedings Library volume 592, pages13–17(1999)Cite this article

Abstract

The thermally oxidized Si1-x-yGexCy thin films were grown on silicon substrates by Plasma-enhanced Chemical Vapor Deposition (PECVD) and then wet oxidized at 800°C for 20 minutes. Photoluminescence spectra of the samples were measured at room temperature under 250nm excitation. Two ultraviolet photoluminescence bands with the peaks at ~370nm and ~396nm were observed in the oxidized samples. Possible mechanism of this photoluminescence is discussed.

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Acknowledgments

This work was supported by National Science Fund of China and the Research Fund for the Doctoral Program of Higher Education. The first author is also supported by MOTOROLA company. The authors also acknowledged W. F. Chen, Y. D. Ye and H. Chen for characterization assistance.

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Affiliations

  1. Physics Department, Nanjing University, Nanjing, 210093, China

    X. M. Cheng, Y. D. Zheng, L. Zang, X. B. Liu, S. M. Zhu, Z. Y. Lo, P. Han & R. L. Jiang

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  1. X. M. Cheng
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  2. Y. D. Zheng
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  3. L. Zang
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  4. X. B. Liu
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  5. S. M. Zhu
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  6. Z. Y. Lo
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  7. P. Han
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  8. R. L. Jiang
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Correspondence to X. M. Cheng.

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Cheng, X.M., Zheng, Y.D., Zang, L. et al. Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si,1-x-yGexCy Thin Films on Si(100) Substrate. MRS Online Proceedings Library 592, 13–17 (1999). https://doi.org/10.1557/PROC-592-165

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