Abstract
This work presents a survey of the mechanisms of the polarization in ferroelectric thin films which are relevant for application in non-volatile ferroelectric memories (FeRAM). Since the integration of these materials in new memory generations requires small structures and therefore a maximum utilization of the switchable polarization, the distinction between the several polarization mechanisms is of specific interest. Standard characterization methods, such as hysteresis loops, C-V measurements and fast pulse switching tests are evaluated and used to distinguish between the reversible and irreversible contributions to the total polarization. The respective contributions are described qualitatively and demonstrated at spin-coated SrBiTa2O9 thin films and compared with Pb(Zr,Ti)O3 films. Additionally, a method is described to obtain the static hysteresis curve, a precise characterization of the polarization which does not depend on the measuring frequency. These data are compared with C-V measurements. It is shown that the standard dynamic hysteresis curve reveals misleading statements about the remanent polarization and the coercive voltage.
Similar content being viewed by others
References
G. Schindler, W. Hartner, V. Joshi, N. Solayappan, G. Derbenwick, C. Mazuraccenté, Int. Ferrod., Vol. 17, 1997, p. 421
G. Arlt, U. Böttger, S. Witte, Ann. Physik, Vol. 3, 1994, pp. 578
G.W. Dietz, M. Schumacher, R. Waser, Proceedings of the Electroceramics IV, Vol. 1, 1994, pp. 161
D Jiles, Introduction to Magnetism and Magnetic Materials, Chapmann and Hall, 1991, p. 95
D. Damjanovic, J. Appl. Phys., Vol. 82, 1997, p. 1788
M. Schumacher, accepted for publication in Journal de Physique IV, 1997
G. Arlt, H. Neumann, Ferroelectrics, Vol. 87, 1988, p. 109
W.L. Warren, G.E. Pike, D. Dimos, K. Vanheusen, H.N. Al-Shareef, B.A. Tuttle, R. Ramesh, J.T. Evans, MRS Symp. Proc, Vol. 433, 1996, p. 257
M. Schumacher, Ph. Daubenspeck, R. Waser, O. Auciello, Proc. Electroceramics V, Vol. 1, 1996, p. 421
Acknowledgement
The authors would like to acknowledge Prof. G.Arlt and M.Schumacher for many fruitful discussions, J.Faehnle and S.Tiedke for their assistance in electrical characterization, and R.Gerhardt for preparing the PZT and SrTiO3 samples. This work was supported by the German Federal Department for Education and Research BMBF (Contract # 03N60075).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Lohse, O., Bolten, D., Grossmann, M. et al. Reversible and Irreversible Contributions to the Polarization in SrBi2Ta2O9 Ferroelectric Capacitors. MRS Online Proceedings Library 493, 267–278 (1997). https://doi.org/10.1557/PROC-493-267
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-493-267