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Photoreflectance Study of MBE Grown Te-doped GaSb at the E0+A0 Transition

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Abstract

Photoreflectance (PR) measurements have been performed on MBE grown GaSb samples at the E0+Δ0 transition. The transition energy has been measured from 4 to 300 K in the 1.35 to 1.8 eV energy region. Transition energy of 1.614 eV and broadening of 53 meV have been obtained at 4 K from a representative Te-doped sample while no PR signals were obtained from undoped samples. The logarithmic dependence of the PR amplitude and invariance of the line shape on the modulating pump intensity, and absence of Franz-Keldysh oscillations are typical of the PR spectra in the low-field regime. Good fits were obtained using line shape analysis of the PR spectra and the temperature dependence of the transition energy and broadening have been determined.

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Acknowledgement

This work has been supported by the Air Force Office of Scientific Research (AFOSR) Grant No. F49620-93-1-01111DEF and F49620-1-05.

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Authors and Affiliations

  1. Department of Electrical Engineering, North Carolina A & T State University, Greensboro, NC, 27411, USA

    S. Iyer, S. Mulugeta, J. Li, B. Mangalam & S. Venkatraman

  2. Department of Physics, Emory University, Atlanta, GA, 30322, USA

    K. K. Bajaj

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  1. S. Iyer
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  2. S. Mulugeta
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  3. J. Li
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  4. B. Mangalam
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  5. S. Venkatraman
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  6. K. K. Bajaj
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Iyer, S., Mulugeta, S., Li, J. et al. Photoreflectance Study of MBE Grown Te-doped GaSb at the E0+A0 Transition. MRS Online Proceedings Library 484, 57–61 (1997). https://doi.org/10.1557/PROC-484-57

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  • DOI: https://doi.org/10.1557/PROC-484-57

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