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Bridgman Growth and Characterization of Bulk Single Crystals of Ga1-xInxSb for Thermophotovoltaic Applications

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Abstract

Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances in low bandgap (0.5-0.7 eV) III-V semiconductors. The use of mixed pseudo-binary compounds allows for the tailoring of the lattice parameter and the bandgap of the material. Conventional deposition techniques (i.e., epitaxy) for producing such ternary or quaternary materials are typically slow and expensive. Production of bulk single crystals of ternary materials, for example Gal-xlnxSb, is expected to dramatically reduce such material costs. Bulk single crystals of Ga1-xInxSb have been prepared using a Bridgman technique in a two-zone furnace. These crystals are 19 mm in diameter by approximately 50 mm long and were produced using seeds of the same diameter. The effects of growth rate and starting materials on the composition and quality of these crystals will be discussed and compared with other attempts to produce single crystals of this material.

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References

  1. The Second NREL Conference on Thermophotovoltaic Generation of Electricity, edited by J. Benner, T. Coutts, and D. Ginley (Am. Inst. Phys. Proc. 358, Woodbury, NY, 1996).

  2. A. Ya. Vul' and Yu. A. Goldberg in Handbook Series on Semiconductor Parameters. Vol.1, edited by M. Levinshtein, S. Rumyantsev, and M. Shur (World Scientific, Singapore, 1996), p. 125 and 191-192.

    Article  Google Scholar 

  3. A. Tanaka, A. Watanabe, M. Kimura, and T. Sukegawa, J. Crystal Growth 135, p. 269 (1994).

    Article  CAS  Google Scholar 

  4. R. Hamaker and W. White, J. Electrochem. Soc. 116, p. 478 (1969).

    Article  CAS  Google Scholar 

  5. V. Ivanov-Omskii and B. Kolomiets, J. Soy. Phys. Solid State 1, p 834 (1959).

    Google Scholar 

  6. J. Yee, M. Lin, K. Sarmi, and W. Wilcox, J. Crystal Growth 30, p. 185 (1975).

    Article  CAS  Google Scholar 

  7. K. Bachmann, T. Thiel, H. Schreiber, and J. Rubin, J. Electronic Mat. 9, p. 445 (1980).

    Article  CAS  Google Scholar 

  8. W. Pfann, Zone Melting, 2nd Ed., John Wiley & Sons, Inc., New York, 1966, p. 11.

    Google Scholar 

  9. P. Dutta, H. Bhat, and V. Kumar, J. Appl. Phys. 81, p. 5821 (1997).

    Article  CAS  Google Scholar 

  10. T. Ashley, J.A. Beswick, B. Cockayne, and C.T. Elliott, 7th Int. Conf. on Narrow Gap Semicond., edited by J. L. Reno (tiInst. Phys. Conf. Ser. No. 144}, Bristol, 1995).

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Authors and Affiliations

  1. Lockheed Martin Corporation, Schenectady, NY, 12301, USA

    J. R. Boyer & W. T. Haines

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  1. J. R. Boyer
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  2. W. T. Haines
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Boyer, J.R., Haines, W.T. Bridgman Growth and Characterization of Bulk Single Crystals of Ga1-xInxSb for Thermophotovoltaic Applications. MRS Online Proceedings Library 484, 45–55 (1997). https://doi.org/10.1557/PROC-484-45

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  • DOI: https://doi.org/10.1557/PROC-484-45

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