Abstract
The effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6° toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6° toward (111)B misorientation, while a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6° toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 60 toward (111)B misorientation compared to 2° toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.
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Acknowledgement
The authors gratefully acknowledge D.R. Calawa, J.W. Chludzinski, M.K. Connors, and V. Todman-Bams for technical assistance, K.J. Challberg for manuscript editing, and D.L. Spears for continued support and encouragement.
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Wang, C.A., Choi, H.K., Oakley, D.C. et al. Substrate Misorientation Effects on Epitaxial GaInAsSb. MRS Online Proceedings Library 484, 37–44 (1997). https://doi.org/10.1557/PROC-484-37
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DOI: https://doi.org/10.1557/PROC-484-37