Abstract
Single crystals of ZnSe, with varying amounts of Cr doping have been studied using Raman and photoluminescence(PL) spectroscopy. The Cr-doped samples show the existence of a coupling mechanism of longitudinal optical(LO) phonons of ZnSe with hole-plasmons. The dependence of intensity ratio of LO and transverse optical(TO) mode on temperature and excitation wavelength, has been attributed to the interaction of the field of LO phonons with the surface electric field in the depletion layer. The interaction of discreet phonons with the electronic continuum of conduction band in ZnSe is responsible for the shift of Raman peaks. The large electron capture cross-section of deep-level Cr2+ and Cr1+ impurities is inhibitive for the observation of band-to-band PL transition at ∼2.7eV in ZnSe:Cr.
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Acknowledgement
The authors at Fisk would like to acknowledge the help of Reed, Schaffers, Page and Payne of LLN Laboratory and Research Collaboration Program for HBCU's through the LLNL EPO. This work was supported in part by NSF (Grant NSF-OSR-(9452893)), NASA-NCCW-0088 and by NASA through the Center for Photonic Materials and Devices, Grant NCC8-133. HDB thanks CSIR’ dia for Emeritus Scientistship award.
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Rai, B.K., Bhaskar, S., Bist, H.D. et al. Raman and Photo-Luminescence Studies on Intrinsic and Cr-Doped Znse Single Crystals. MRS Online Proceedings Library 484, 365–370 (1997). https://doi.org/10.1557/PROC-484-365
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DOI: https://doi.org/10.1557/PROC-484-365