Abstract
Recent results on MOVPE growth of multilayer two-color HgCdTe detectors, for simultaneous and independent detection of medium wavelength (MW, 3-5 fum) and long wavelength (LW, 8-12 fum) bands, are reported. The structures are grown in situ on lattice matched (100) CdZnTe in the double-heterojunction p-n-N-P configuration. A barrier layer is placed between the LW and MW absorber layers to prevent diffusion of MW photocarriers into the LW junction and thereby eliminate spectral crosstalk. X-ray double crystal rocking curve widths are ∼ 45 arc-secs, indicating good epitaxial quality. SIMS depth profile measurements of these 28 fum thick structures show well-defined alloy compositions, and arsenic and iodine doping. SIMS data on a series of thirteen films show that good run-to-run repeatability is obtained on thicknesses, compositions, and dopant levels with values close to the device design targets. Depth profile of etch pits through the thickness of the films show etch pit densities in the range of 8x105-5x106 cm-2.
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Acknowledgement
We gratefully acknowledge the support of the Air Force Phillips Laboratory Contract F29601-96-C-0008 monitored by Dr. Paul D. LeVan and the support of the BMDO-Advanced Sensor Technology Program monitored by Dr. Paul D.LeVan and the support of the BMDO-Advanced Sensor Technology Program managed by Dr. Walt Dyer. This work also supported in part by Lockheed Martin Vought Systems internal research funds.
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Mitra, P., Case, F.C., Barnes, S.L. et al. Bandgap-Engineering of HgCdTe for Two-Color Ir Detector Arrays BY Movpe. MRS Online Proceedings Library 484, 233–240 (1997). https://doi.org/10.1557/PROC-484-233
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DOI: https://doi.org/10.1557/PROC-484-233