Abstract
The application of non-equilibrium transport techniques to Molecular Beam Epitaxy (MBE) grown InSb/InAlSb heterostructure diodes has produced practical devices such as midinfrared LED’s and negative luminescent sources that operate at room temperature. By extending the epitaxial growth to vicinal InSb substrates it has been demonstrated that the temperature window for high quality epitaxy can be lowered by ∼120°C, giving greatly improved epilayer morphology. The degree of misorientation needed for given growth temperatures is shown from Atomic Force Microscope (AFM) measurements to be only ∼2°. In addition, the lower growth temperature gives improved dopant activation, lower trap densities and lower reverse bias leakage currents, with consequent benefits to device performance.
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T Ashley, A B Dean, C T Elliott, G J Pryce, A D Johnson & H Wills, Appl. Phys. Lett. 66, No.4, pp481–3, (1995).
T Ashley, C T Elliott, N T Gordon, R S Hall, A D Johnson & G J Pryce, Appl. Phys. Lett. 64, No. 18, pp2433–5, 1994.
T Ashley, C T Elliott, N T Gordon, R S Hall, A D Johnson & G J Pryce, Infrared Physics & Technology, 36, pp1037–44, 1995.
T Ashley, C T Elliott, R Jefferies, A D Johnson, G J Pryce & A M White, Appl. Phys. Lett. 70, (8), pp. 931–33, 1997.
A J Norieka & M H Francombe, J. Appl. Phys. 52, (12), pp. 7416–7420, 1981.
Kunishige Oe, Seigo Ando & Koichi Sugiyama, Jap. Journ. Appl. Phys. 19, No. 7, pp. L417–20, 1980.
G M Williams, C R Whitehouse, T Martin, N G Chew, A G Cullis, T Ashley, D E Sykes, K Mackay & R H Williams, J. Appl. Phys. 63, p1526, 1988.
R Droopad, R L Williams & S D Parker, Semicond. Sci. & Technol. 4, p 11, 1989.
S D Parker, R L Williams, R Droopad, R A Stradling, K W J Barnham, S N Holmes, J Laverty, C C Phillips, E Skuras, R Thomas, X Zhang, A Staton-Bevan and D W Pashley, Semicond. Sci. Technol. 4, pp. 663–676 (1989).
P E Thompson, J L Davis, M-J Yang, D S Simons and P H Chi, J. Appl. Phys. 74, (11), pp. 6686–6690 (1993).
A D Johnson, G M Williams, A J Pidduck, C R Whitehouse, T Martin, C T Elliott & T Ashley, Inst. Phys. Conf Ser. No. 144, Section 4, pp204–8, 1995.
M B Santos & W K Liu, Inst. Phys. Conf. Ser. No. 144, Section 4, pp199–203, 1995.
G W Smith, A J Pidduck, C R Whitehouse, J L Glasper & J Spowart, J. Cryst. Growth 127, p996, 1993.
C Orme, M D Johnson, K-T Leung, B G Orr, P Smilauer & D Vvedensky, J. Cryst. Growth 150, p128, 1995.
M Rost, P Smilauer & J Krug, Surf. Sci. 369, pp. 393–402, 1996.
C.T. Elliott, N.T. Gordon, T.J. Phillips, A.M. White, C.L. Jones, C.D. Maxey and N.E. Metcalfe, Journal of Electronic Materials, 25 (8), p1139, 1996
Acknowledgement
We would like to thank staff at Wafer Technology (Milton Keynes, UK) for their help in preparing vicinal InSb substrates. We would also like to thank D E J Soley, L M Smite, V D Stimson and P K Moores for their invaluable technical assistance in enabling these measurements to be made.
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Johnson, A.D., Smout, A.B.J., Cairns, J.W. et al. Non-Equilibrium InSb/InAISb Diodes Grown by MBE. MRS Online Proceedings Library 484, 143–152 (1997). https://doi.org/10.1557/PROC-484-143
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DOI: https://doi.org/10.1557/PROC-484-143