Abstract
The optical and electrical properties of InAs/GaInSb superlattice mesa photodiodes with a cutoff wavelength around 8 µm are investigated. The influence of the surface potential at the mesa sidewalls on the device properties was studied by fabricating gate-controlled diodes. At least two mechanisms determining the dark current in the reverse bias region can be identified. At high reverse biases bulk bandto- band tunneling dominates while the current at low reverse biases is most likely governed by surface effects. Bulk interband tunneling is further investigated by applying magnetic fields B up to 7 T parallel and perpendicular to the electric field E across the p-n junction.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. L. Smith and C. Mailhoit, J. Appl. Phys. 62 (6), 2545 (1987).
D. H. Chow, R. H. Miles, and C. W. Nieh, J. Cryst. Growth 111, 883 (1991).
J. L. Johnson, L. A. Samoska, A. C. Gossard, J. L. Merz, M. D. Jack, G. R. Chapman, B. A. Baumgratz, K. Kosai, and S. M. Johnson, J. Appl. Phys. 80 (2), 1116 (1996).
F. Fuchs, W. Pletschen, U. Weimar, J. Schmitz, M. Walther, J. Wagner, and P. Koidl, Proc. 8th Int. Conf. On Narrow Gap Semiconductors, Shanghai (1997), in press.
M. B. Reine, A. K. Sood, and T. J. Tredwell, vol.18 of Semiconductors and Semimetals, pp. 201–311, Academic Press, 1981.
R. Adar, Y. Nemirovsky, and I. Kidron, Solid-State Electron. 30 (12), 1289 (1987).
G. Tuttle, H. Kroemer, and J. H. English, J. Appl. Phys. 65 (12), 5239 (1989).
J. Wagner, J. Fuchs, J. Schmitz, W. Pletschen, U. Weimar, N. Herres, M. Walther, and P. Koidl, Electrochem. Soc. Proc. 97 (21), 171 (1997).
F. Fuchs, U. Weimar, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, Appl. Phys. Lett. 71 (2), 3251 (1997).
S. M. Sze, Physics of Semiconductor Devices, pp. 97–98, John Wiley & Sons, 1981.
E. O. Kane, J. Phys. Chem. Solids 12, 181 (1959).
F. Fuchs, E. Ahlswede, U. Weimar, W. Pletschen, J. Schmitz, M. Hartung, A. Wixforth, J. P. Kotthaus, and F. Szmulowicz, to be published.
S. M. Sze, Physics of Semiconductor Devices, pp. 74–77, John Wiley & Sons, 1981.
P. N. Argyres, Phys. Rev. 126(4), 1386 (1962).
F. Szmulowicz, private communication.
V. V. Zav'ialov and V. F. Radantsev, Semicond. Sci. Technol. 9, 281 (1994).
A. G. Aronov and G. E. Pikus, Soy. Phys. JEPT 24(1), 188 (1967).
Acknowledgement
The technical assistance of H. Güllich M. Kaufmann, J. Linsenmeier, J. Schleife, and K. Schwarz is gratefully acknowledged. The authors would further like to thank J. Wagner for his valuable contributions. The work was financially supported by the Bundesministerium für Verteidigung.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Weimar, U., Fuchs, F., Ahlswede, E. et al. unneling effects in InAs/GaInSb superlattice infrared photodiodes. MRS Online Proceedings Library 484, 123–128 (1997). https://doi.org/10.1557/PROC-484-123
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-484-123