Abstract
Stimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum-well (QW) lasers was observed up to room temperature at 4.5 fum, optically pumped by a pulsed 2-fum Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm2 at 300 K, with a characteristic temperature T0 of 61.6 K for temperatures up to 300 K. We will also study the effects of internal loss on the efficiency and output power for type-II QW lasers via optical pumping. Using a 0.98-fum InGaAs linear diode array, the devices exhibited an internal quantum efficiency of 67% at temperatures up to 190 K, and was capable of > 1. 1-W peak output power per facet in 6-fus pulses at 85 K. The internal loss of the devices exhibited an increase from 18 cm-1 near 70 K to ∼ 60-100 cm-1 near 180 K, which was possibly due to inter-valence band free carrier absorption.
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Acknowledgement
The authors at University of Houston wish to thank Jun Zheng for the detailed band structure. The work at Univ. of Houston is partially supported by NASA contract No. NAGW-977 and TCSCH. The work at MIT Lincoln Laboratory is supported by the US Department of the Air Force. The work at Applied Optoelectronics Inc. is partially supported by Air Force Phillips Lab. under the contract No. F29601-97-C-0072.
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Lin, CH., Murry, S.J., Yang, R.Q. et al. High-Power Low-Threshold Optically Pumped Type-ll Quantum-Well Lasers. MRS Online Proceedings Library 484, 107–116 (1997). https://doi.org/10.1557/PROC-484-107
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DOI: https://doi.org/10.1557/PROC-484-107