Abstract
Laser induced defects in (AI,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM measurements indicate a point defect or point defect complex for B and D. Defect B is described by a configuration coordinate (CC-) model with low vibrational energies. Defect DLD consists of extended dislocations.
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B.C. DeLoach, B.W. Hakki, R.L. Hartman and L.A. D’Asaro, Proc. IEEE 61, 1042 (1973)
W.D. Johnson, Jr. and B.I. Miller, Appl. Phys. Lett. 23, 192 (1973)
P.M. Petroff and R.L. Hartman, Appl. Phys. Lett. 23, 769 (1973)
P.M. Petroff and L.C. Kimmerling, Appl. Phys. Lett. 29, 461 (1976)
S.O. Hora, P.W. Hutchinson and P.S. Dobson, Appl. Phys. Lett. 30, 368 (1977)
H.H. Gilgen, R.P. Salathé, and Y. Rytz-Froidevaux, Appl. Phys. Lett. 38, 241 (1981)
R.P. Salathé, H.H. Gilgen, and Y. Rytz-Froidevaux, IEEE Quantum Electron. QE-17, 1989 (1981)
B. Zysset, R.P. Salathé and H.H. Gilgen, Appl. Phys. Lett. 42, 170 (1983)
J.A. van Vechten, Europhys. J. Physica B + C, 116, 575 (1983)
E.W. Williams and H. Barry Bebb in Semiconductors and Semimetals Vol. 8, p. 321 ed. R.K. Willardson and Albert C. Beer (Academic Press New York 1972)
C.J. Hwang, Phys. Rev. 180, 827 (1968)
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Zysset, B., Salathe, R.P., Martin, J.L. et al. Luminescence and TEM-Investigation of Laser Induced Defects in (Al,Ga)As Heterostructures. MRS Online Proceedings Library 46, 419–424 (1985). https://doi.org/10.1557/PROC-46-419
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DOI: https://doi.org/10.1557/PROC-46-419