Abstract
Diamond has attractive properties as an advanced electronic material. Its combination of high carrier mobility, electric breakdown, and thermal conductivity results in the largest calculated figures of merit for speed and power of any material. Recently, the discovery and development of what might be called sophisticated secondary effects in diamond, are opening interesting sensor applications. Boron doped diamond will change electrical resistance with strain (piezoresistance), meaning it can be used as a strain gauge on rugged electronic microsensors for pressure and acceleration sensing. This paper will present some critical issues of diamond for microelectromechanical sensing applications such as its rupture stress and edge stress of diamond diaphragms and the high temperature responses of a diamond pressure sensor. We will describe an all diamond pressure microsensor that measures pressure at more than 300°C. Also, we have observed that layered diamond films can behave as chemical sensors measuring hydrogen, oxygen and many other chemicals’ concentration. For example, a diamond-based chemical gas sensor using Pd/i-diamond/p+-diamond metal-insulator-semiconductor diode structure has been made and the behavior of a new diamond-based chemical gas sensor has been studied. Also, the creation and properties of diamond microtips as field emitters are discussed.
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D. R. Wur, J. L. Davidson, W. P. Kang, and D. L. Kinser, Third International Symposium on Diamond Materials, 183rd Meeting of the Electrochemical Society, Honolulu, Hawaii, May 1993.
D. Wur, J. L. Davidson, and W. P. Kang, “A Polycrystalline Diamond Film Piezoresistive Microsensor,” Transducers 1993, Yokohama, Japan, July, 1993.
Design Considerations for Diaphragm Pressure Transducers, Micro-Measurements Tech. Note, 129, 1968.
L. M. Edwards and J. L. Davidson, Proceedings of 3rd. European Conference on Diamond, Diamond-like and Related Coatings, Heidelberg, Germany, Aug., 1992.
D.R. Wur, J.L. Davidson, J.P. Wang, and Y.C. Ling, “Dopant Concentration Dependence of Piezoresistive Effect in Boron Doped Polycrystalline Diamond Films”, Fifth Annual Diamond Workshop, Wayne State University, Troy, MI, May, 1994.
M. Frenklach, J. Appl. Phys. 65 (12), 5142–5149, 1989.
J. L. Davidson, J. S. Shor, D. R. Wur and A. D. Kurtz, Third International Symposium on Diamond Materials, 183rd Meeting of the Electrochemical Society, Honolulu, Hawaii, May 1993.
D. R. Wur. W., J. L. Davidson., W. P. Kang., D. L. Kinser., “Polycrystalline Diamond Pressure Sensor,” IEEEJ. Microelectromechanical Systems, Vol. 4, No. 1, March, 1995.
S. M. Sze, Physics of Semiconductor Devices (Weley-Interscience, New York, 1981)
W. P. Kang, Y. Gurbuz, J. L. Davidson and D. V. Kerns, “A Polycrystalline Diamond Thin-Film-Based Hydrogen Sensor,” Sensors and Actuators B, Vol. 24–25, pp. 421–425, 1995.
C. A. Spindt, et al., “Research into Micron-size Emission Tubes”, IEEE Conf. on Tube Techniques, 1966.
W. P. Kang, J. L. Davidson, “Patterned Diamond Field Emitter Arrays,” submitted to, J. Vac. Sei. Tech.
Acknowledgments
The authors gratefully acknowledge the support of the Vanderbilt School of Engineering through the Vanderbilt Microelectronics Laboratory. The financial support provided by the University Research Council of Vanderbilt University for a portion of this work is gratefully acknowledged. The invaluable help of M. Howell in equipment operation and experimental execution and graduate and student assistants, D. Wur, Y. Gurbuz, N. Johnson, and K. Holmes, is greatly appreciated. Donation of critical materials was provided by Owens-Illinois, Inc., ESL, Inc. and Harris Semiconductor, Inc.
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Davidson, J.L., Kang, W.P. Examples of Diamond Sensing Applications. MRS Online Proceedings Library 416, 397–406 (1995). https://doi.org/10.1557/PROC-416-397
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DOI: https://doi.org/10.1557/PROC-416-397