Abstract
The photoconductive gain mechanism in a-Si:H was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and n-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales: one for short pulses of visible light (< 1 μsec) which simulates the transit of an energetic charged particle, and the other for rather long pulses of light (1 msec) which simulates x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of 3 ∼ 9 for short pulses and a few hundred for long pulses at a dark current level of 10 mA/cm2. Various gain results are discussed in terms of the device structure, applied bias and dark current.
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Lee, H.K., Drewery, J.S., Hone, W.S. et al. Utilization of Photoconductive Gain in a-Si:H Devices for Radiation Detection. MRS Online Proceedings Library 377, 767–772 (1995). https://doi.org/10.1557/PROC-377-767
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DOI: https://doi.org/10.1557/PROC-377-767