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Diffusion Behavior of B-, As- and Sb-Dopants in Thin Epitaxial Layers

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Abstract

Advanced CVD- and MBE-epitaxy allows processing of very thin epitaxial layers with extremely steep dopant gradients. As steep dopant profiles are very sensitive to temperature treatments, the impact of thermal processing from 800°C to 1000°C on the dopant redistribution in epitaxial layers was investigated.

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Authors and Affiliations

  1. Corp. Res., Siemens AG, Munich, Germany

    W. H. Krautschneider, F. Lau & H. Schaefer

  2. Universitaet der Bundeswehr Muenchen, Munich, Germany

    H. Gossner

Authors
  1. W. H. Krautschneider
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  2. F. Lau
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  3. H. Gossner
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  4. H. Schaefer
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Krautschneider, W.H., Lau, F., Gossner, H. et al. Diffusion Behavior of B-, As- and Sb-Dopants in Thin Epitaxial Layers. MRS Online Proceedings Library 358, 945 (1994). https://doi.org/10.1557/PROC-358-945

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  • DOI: https://doi.org/10.1557/PROC-358-945

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