Abstract
The technologies of laser crystallization and methods of SiO2 formation in remote plasma chemical vapor deposition or SiO evaporation with an oxygen ambient realize the fabrication of n-channel polycrystalline and amorphous silicon thin film transistors (poly-Si and a-Si TFTs) at a temperature lower than 300 °C. The defect density was achieved to be 2∼3×1011 cm−2eV−1 and threshold voltage was about IV for both TFTs. The maximum field effect mobility was 600 cm2/Vs for poly-Si TFTs and 2.6 cm2/Vs for a-Si TFTs. The mobility of poly-Si TFT decreased as the gate voltage increases. This is interpreted as that the electrons are confined in the narrow inversion layer and electron scattering with phonon is enhanced for higher normal electric field.
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References
T. Sameshima, S. Usui and M. Sekiya, IEEE Electron Dev. Lett. EDL–7, 276 (1986).
K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko, and K. Hotta, IEEE Trans. Electron. Devices, 36, 2868 (1989).
T. Sameshima, Mat. Res. Soc. Symp. Proc. 283, 679 (1993).
T. Serikawa, S. Shirai, A. Okamoto, and S. Suyama, IEEE Trans. Electron. Dev. 36, 1929 (1989).
S. Kim, D. J. Stephen, G. Lucovsky, G. G. Fountain, and R. J. Markunas, J. Vac. Sci. Technol., A8, 2039 (1990).
T. Mizutani, T. Yunogami and K. Tsujimoto, Appl. Phys. Lett., 57, 1654 (1990).
E. Fogarassy, C. Fuchs, A. Slaoui, S. de Unamuno and J.P. Stoquert, W. Marine and B. Lang, J. Appl. Phys. 76, 2612 (1994).
M. Sekiya, M. Hara, N. Sano, A. Kohno and T. Sameshima, IEEE Electron Device Letters, EDL-15, 69 (1994).
N. Sano, A. Kohno, M. Hara, M. Sekiya and T. Sameshima, Appl. Phys. Lett. 65, 162 (1994).
A. Kohno, T. Sameshima, N. Sano, M. Sekiya and M. Hara: to be published to IEEE Trans Elecron Device.
T. Sameshima, A. Kohno, M. Sekiya, M. Hara, N. Sano, Appl. Phys. Lett., 64 1018 (1994).
T. Sameshima, A. Kohno, M. Sekiya, M. Hara and N. Sano, Jpn.J.Appl.Phys.Lett., 33, 834 (1994).
T. Sameshima, M. Hara and S. Usui, Jpn. J. Appl. Phys. 28, 1789 (1989).
T. Sameshima and S. Usui, Jpn.J.Appl.Phys.Lett., 26, 1208 (1987).
N. Sano, A.K ohno, M. Hara, M. Sekiya and T. Sameshima, submitted to IEEE Electron Device Letters.
T. Sameshima and G. Langguth, submitted to J. Appl. Phys.
S.M. Sze, Physics of Semiconductor Devices 2nd edition (John Wiley & Sons New York, 1981) Chapter 8.
M. Shur, C. Hyun and M. Hack, J. Appl. Phys. 59, 2488 (1986).
M.J. Powell, IEEE Trans. Electron Devices, 36, 2753 (1989).
R.R. Troutman and A. Kotwal, IEEE Trans. Electron Devices, 36, 2915 (1989).
C. van Berkel, J.R. Hughes and M.J. Powell, J. Appl. Phys. 66, 4488 (1989).
M. Shur, and M. Hack, J. Appl. Phys. 55, 3831 (1984).
J.A. Cooper Jr. and D.F. Nelson, J. Appl. Phys. 54, 1445 (1983).
S.A. Schwarz and S.E. Russek, IEEE Trans. Electron Devices, 30, 1634 (1983).
S.C. Sun and J.D. Plummer, IEEE Trans. Electron Devices, 27, 1497 (1980).
S. Takagi, M. Iwano and A. Toriumi, Proc. in Int. Conf. Dev. Mat 88, 398 (1988).
S. Imanaga and Y. Hayafuji, J. Appl. Phys. 70, 1522 (1991).
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Sameshima, T., Sekiya, M., Hara, M. et al. Carrier Transport in Polycrystalline and Amorphous Silicon Thin Film Transistors. MRS Online Proceedings Library 358, 927 (1994). https://doi.org/10.1557/PROC-358-927
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DOI: https://doi.org/10.1557/PROC-358-927