Abstract
We succeeded, for the first time, in depositing a silicon film which features 1000Å-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhanced CVD from silane diluted with hydrogen at a considerably high temperature (550°C). 5pm-thick undoped amorphous silicon film was deposited on the above film and was crystallized by a solid phase crystallization method. The polycrystalline silicon film which was obtained has a columnar structure and shows an extremely high electron mobility of 808 cm2/Vs.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
B. J. Baliga, J. Cryst. Growth, 41, 199 (1977).
R. R. Haberecht and E.L. Kern, in Semiconductor Silicon (Electrochemical Society, 1969).
T. Matsuyama, M. Taguchi, M. Tanaka, T. Matsuoka, S. Tsuda, S. Nakano and Y. Kuwano, Jpn. J. Appl. Phys., 29, 2327 (1990).
A. Gat, L. Gerzlieyg, J. F. Gibbons, T. J. Magee, J. Peng and J. D. Hong, Appl. Phys. Lett., 33, 775 (1978).
F. S. Becker, H. Oppolzer, I. Weitzel, H. Eichermueller and H. Schaber, J. Appl. Phys., 56, 1233 (1984).
T. Matsuyama, M. Tanaka, S. Tsuda, S. Nakano and Y. Kuwano, Jpn. J. Appl. Phys., 32, 3720 (1993).
A. Matsuda, J. Non-Cryst. Solids., 59&60, 767 (1983).
G. Parsons, J. Boland and J. Tsang, Jpn. J. Appl. Phys., 31, 1943 (1992).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Baba, T., Matsuyama, T., Sawada, T. et al. High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method. MRS Online Proceedings Library 358, 895 (1994). https://doi.org/10.1557/PROC-358-895
Published:
DOI: https://doi.org/10.1557/PROC-358-895