Abstract
Light emitting Si nanostructures were fabricated by recrystallizing Si/SiNx superlattices grown by plasma enhanced chemical vapor deposition. After recrystallisation by a laser annealing or by rapid thermal annealing the Raman spectra show clearly a confinement effect. A substantial photoluminescence around 470 to 550 nm and at 620 nm is observed after a hydrogen passivation step. The photoluminescence at 620 nm is assigned to carrier recombination via efficient surface states, whereas the blue emission at 470 to 550 nm shows a behaviour expected for quantum confinement effects.
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E.F. Steigmeier, D. Grützmacher, H. Auderset, R. Morf, to be published
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Grützmacher, D.A., Steigmeier, E.F., Auderset, H. et al. Observation of Quantum Size Dependent Blue Shift in the Luminescence of Recrystallized Si/SiNx Superlattices. MRS Online Proceedings Library 358, 833 (1994). https://doi.org/10.1557/PROC-358-833
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DOI: https://doi.org/10.1557/PROC-358-833