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The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

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Abstract

This work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].

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Authors and Affiliations

  1. Materials Science Department, Faculty of Science and Technology of New University of Lisbon, Portugal

    R. Martins, I. Ferreira & E. Fortunato

  2. Quinta da Torre, CEMOP/UNINOVA, P-2825, Monte de Caparica, Portugal

    M. Vieira

Authors
  1. R. Martins
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  2. M. Vieira
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  3. I. Ferreira
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  4. E. Fortunato
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Martins, R., Vieira, M., Ferreira, I. et al. The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques. MRS Online Proceedings Library 358, 787 (1994). https://doi.org/10.1557/PROC-358-787

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  • DOI: https://doi.org/10.1557/PROC-358-787

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