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Deposition of Microcrystalline Si,Ge (μc-Si,Ge) Alloys by Reactive Magnetron Sputtering

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Abstract

SixGei1-x:H alloys which span the transition from amorphous to microcrystalline structures have been prepared by reactive magnetron sputtering (RMS) from pure crystalline Si and Ge targets in different partial pressures of hydrogen, using argon as the sputtering gas. Film properties were studied as a function of H2 flow and partial pressure. X-ray diffraction (XRD), Raman scattering, Fourier transform infrared spectroscopy (FTIR), reflection high-energy electron diffraction (RHEED), and high resolution transmission electron microscopy (HRTEM) have been used for microstructural characterization. Films prepared by RMS at a partial pressure of hydrogen (PH2) < ~ 4 mTorr were amorphous, while those prepared with PH2 > ~ 6 mTorr were microcrystalline.

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Authors and Affiliations

  1. Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, N.C., 27695-8202, USA

    S. M. Cho, D. Wolfe, S. S. He, K. Christensen, D. M. Maher & G. Lucovsky

Authors
  1. S. M. Cho
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  2. D. Wolfe
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  3. S. S. He
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  4. K. Christensen
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  5. D. M. Maher
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  6. G. Lucovsky
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Cho, S.M., Wolfe, D., He, S.S. et al. Deposition of Microcrystalline Si,Ge (μc-Si,Ge) Alloys by Reactive Magnetron Sputtering. MRS Online Proceedings Library 358, 781 (1994). https://doi.org/10.1557/PROC-358-781

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  • DOI: https://doi.org/10.1557/PROC-358-781

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