Abstract
The growth mechanism and material properties of -type μc-Si:H prepared with plasma enhanced chemical vapour deposition in the very high frequency range is investigated. By increasing the plasma excitation frequency the grain size, deposition rate and Hall mobility can be simultaneously increased without having to adjust other deposition parameters in particular the temperature. This effect is explained by an enhanced selective etching of amorphous tissue and grain boundary regions together with a sufficient supply of growth species at high frequency plasmas.
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Hapke, P., Finger, F., Luysberg, M. et al. Large Grain Size and High Deposition Rate for Microcrystalline Silicon Prepared by VHF-GD. MRS Online Proceedings Library 358, 745 (1994). https://doi.org/10.1557/PROC-358-745
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DOI: https://doi.org/10.1557/PROC-358-745