Skip to main content
SpringerLink
Log in

Characterization of the Thin Oxide-Nitride-Oxide (ONO) Structure Using Spectroscopic Ellipsometry

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Spectroscopic ellipsometry has been used to characterize thin oxide/nitride/oxide (ONO) layer structures. Films were deposited on top of the Si/oxide/polysilicon filmstack using a low-pressure chemical vapor deposition (LPCVD) technique. Different approaches to modeling this structure are compared to select an adequate representation. Analysis of the data for the three-layer-with-abrupt-interfaces ONO model using an effective-medium or Cauchy approximation shows strong correlation of the parameters and ambiguity of the results. A more robust and physically plausible model of the ONO structure as an inhomogeneous oxynitride film with Gaussian distribution of the silicon nitride component is suggested. This interpretation of the ONO structure is supported by the results of Auger electron spectroscopy (AES) and transmission electron microscopy (XTEM).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. T.C. Chao, C.L. Lee and T.F. Lei, J. Appl.Phys. 73, 1732 (1993).

    Article  CAS  Google Scholar 

  2. Y. Zhang, G.S. Oehrlein and G.W. Kroesen et al., J. Electrochem. Soc. 140, 1439 (1993).

    Article  CAS  Google Scholar 

  3. M. Wiedner and A. Roseler, Physica Status Solidi (a) 130, 115 (1992).

    Article  Google Scholar 

  4. P.G. Snyder, Y.M. Xiong, J.A. Woollam et al., Surf. Interface Anal. 18, 113 (1992).

    Article  CAS  Google Scholar 

  5. L. Asinovsky in Diagnostic Techniques for Semiconductor Materials Processing (Mater. Res. Soc. Proc. 324, Pittsburgh, PA), 1994).

  6. P.C. Fazan, A. Ditali, C.H. Dennison et al., J. Electrochem. Soc. 138, 2052 (1991)

    Article  CAS  Google Scholar 

  7. L. Gonzo, F. Marchetti and M. Sarkar Thin Solid Films 228, 68 (1993).

    Article  CAS  Google Scholar 

  8. W.H. Press, B.P. Flannery and W.T. Vetterling, Numerical Recipes, Cambridge Univ. Press, 1986.

    Google Scholar 

  9. Referencen, k spectra were taken from Handbook of Optical Constants of Solids, ed. by E.D. Palik (Academic Press, NY, 1985).

  10. L.M. Asinovsky, Thin Solid Films 233, 210 (1993).

    Article  CAS  Google Scholar 

  11. V.I. Gavrilenko et al., Phys. Stat. Sol. 155, 723 (1989).

    Article  CAS  Google Scholar 

  12. F. Terry, J. Appl. Phys. 70, 409 (1991).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Rudolph Research, Flanders, NJ, 07836, USA

    Leo M. Asinovsky

  2. Digital Equipment Corp., Hudson, MA, 01749, USA

    Steve Zierer

Authors
  1. Leo M. Asinovsky
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Steve Zierer
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Asinovsky, L.M., Zierer, S. Characterization of the Thin Oxide-Nitride-Oxide (ONO) Structure Using Spectroscopic Ellipsometry. MRS Online Proceedings Library 358, 1029 (1994). https://doi.org/10.1557/PROC-358-1029

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-358-1029

Search

Navigation