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Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

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Abstract

The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*1010cm−2. The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7916, USA

    K. Dovidenko, S. Oktyabrsky & J. Narayan

  2. Center for Quantum Devices, Northwestern University, Evanston, Illinois, 60208, USA

    M. Razeghi

Authors
  1. K. Dovidenko
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  2. S. Oktyabrsky
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  3. J. Narayan
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  4. M. Razeghi
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Dovidenko, K., Oktyabrsky, S., Narayan, J. et al. Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon. MRS Online Proceedings Library 358, 1023 (1994). https://doi.org/10.1557/PROC-358-1023

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  • DOI: https://doi.org/10.1557/PROC-358-1023

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