Abstract
Low temperature optical absorption spectra are presented for a series of InAsxP1-x/InP strained layer multiple quantum well structures (0 < x = 0.35) grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE) using trimethylindium (TMIn), tertiarybutylarsine (TBAs) and phosphine as precursors. The well widths and compositions in these structures are determined from high resolution x-ray diffraction and transmission electron microscopy. The absorption spectra are then analyzed by fitting the excitonic peak energy position with transition energies determined from a solution to the Schrödinger equation. We used the envelope function formalism with the Kane bands as the basis wavefunctions and included corrections for non parabolicity. From these fits and elasticity theory, both the bandgap of unstrained InAsxP1-x and the band offsets of these heterostructures are deduced self-consistently. The conduction band offsets are found between 72% and 75% of the total strained bandgap differences.
Similar content being viewed by others
References
E. Yablanovitch and E.O. Kane, IEEE J. Lightwave Technol. LT–6, 1292 (1989).
C.A. Tran, J.T. Graham, R.A. Masut and J.L. Brebner, MRS vol. 326, 115 (1994).
D.R. Storch, R.P. Schneider Jr., and B.W. Wessels, J. Appl. Phys. 72, 3041 (1992).
G.C. Osboum, J. Vac. Sci. Technol., A3, 826 (1985)
L.F. Palmateer, P.J. Tasker, T. Itoh, A.S. Brown, G.W. Wicks and L.F. Eastman, Electron. Lett. 23, 53 (1987).
P.J.A. Thijs, T.v. Dongen, L.F. Tiemeijer and J.J.M. Binsma, J. Lightwave Technol. 12, 28 (1994).
C.A. Tran, J.T. Graham, J.L. Brebner, R.A. Masut, J. Electron. Mater. (in press).
S.J. Hwang, W. Shan, J.J. Song, H.Q. Hou and C.W. Tu, J. Appl. Phys. 72, 1645 (1992).
A. Bensaada, J.T. Graham, J.L. Brebner, A. Chennouf, R.W. Cochrane, R. Leonelli and R.A. Masut, Appl. Phys. Lett. 64, 273 (1994).
G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures, (Éditions de Physique, Les Ulis, 1988).
G.E. Pikus and G.L. Bir, Sov. Phys. Solid State 1, 136 (1959); 1, 1502 (1960).
Christian Mailhiot and Darryl L. Smith, Critical Reviews in Solid State and Materials Sciences 16, 131 (1990) and references therein.
A. Bensaada, A. Chennouf, R.W. Cochrane, J.T. Graham, R. Leonelli and R.A. Masut, J. Appl. Phys. 75, 3024 (1994).
P.F. Fewster, Philips J. of Research 45, 620 (1984).
M. Beaudoin, M. Meunier, T. Muschik, R. Schwarz, C.J. Arsenault, M. Beaulieu et O. Grimal, Can. J. Phys. 70, 824 (1992).
E.O. Kane, J. Phys. Chem. Sol. 1, 249 (1957).
R. Leonelli, C.A. Tran, J.L. Brebner, J.T. Graham, R. Tabti, R.A. Masut and S. Charbonneau, Phys. Rev. B. 48, 11135 (1993).
Sandrine Juillaguet, Effets d’interruptions de croissance sur les propriétés optiques des puits quantiques ultra minces GaInAs/InP, Thése de Doctorat (Université de Montpellier II, France).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Beaudoin, M., Masut, R.A., Isnard, L. et al. Band Offsets of InAsxP1−X/InP Strained Layer Quantum Wells Grown by LP-Movpe Using TBAs. MRS Online Proceedings Library 358, 1005 (1994). https://doi.org/10.1557/PROC-358-1005
Published:
DOI: https://doi.org/10.1557/PROC-358-1005