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Local Structure Surrounding Implanted As+ Ions in Polysulfone Films

MRS Online Proceedings Library volume 321, pages 113–116 (1993)Cite this article

Abstract

Results from As K-edge XAFS studies on polysulfone films implanted with 50 KeV As+ in the dose range of 1015 to 1016 ions/cm2 indicate that As reacts chemically with O atoms to form As-(3)O based molecular structures having As-0 bond lengths equal to 1.81±0.02 Å. In comparison to samples implanted in the dose range 1015 to 1016 ions/cm2, the molecular environment surrounding As in polysulfone implanted at 1017 ions/cm2 has additional structure beyond the nearest-neighbor O atoms.

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Acknoledgments

The X23-A2 beamline at Brookhaven National Laboratory is supported in part by the National Institute of Standards and Technology. The NSLS is supported by the Department of Energy under contract DE-AC02-76CH00016.

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Authors and Affiliations

  1. Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO, 65804, USA

    R. A. Mayanovic, Y. Feng, K. W. Groh, Y. Wang & R. E. Giedd

  2. Brewer Science Inc., Rolla, MO, 65401, USA

    M. G. Moss

Authors
  1. R. A. Mayanovic
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  2. Y. Feng
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  3. K. W. Groh
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  4. Y. Wang
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  5. R. E. Giedd
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  6. M. G. Moss
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Mayanovic, R.A., Feng, Y., Groh, K.W. et al. Local Structure Surrounding Implanted As+ Ions in Polysulfone Films. MRS Online Proceedings Library 321, 113–116 (1993). https://doi.org/10.1557/PROC-321-113

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  • DOI: https://doi.org/10.1557/PROC-321-113