A new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing
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The authors would like to thank Dr. J. Y. Lee and Dr. S. Nam for TEM oberservation, and Y. K. Bae for sample processing.
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Song, YH., Baek, JT., Nam, KS. et al. A New Annealing Method to Obtain High Quality Poly-Si. MRS Online Proceedings Library 283, 745–750 (1992). https://doi.org/10.1557/PROC-283-745