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Effects of Confinement on Shallow Impurities in GaAs-Ga1-xA1xAs Quantum Dots

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Abstract

The ground state energy of a shallow impurity placed in the center of a circular quantum dot is studied. The effects of the strength of the confinement potential and a perpendicular magnetic field are investigated theoretically.

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References

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Acknowledgement

One of us (F.M.P.) is supported by the Belgian National Science Foundation (NFWO). Part of this work is supported by s'Krediet aan Navorserss' (NFWO).

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Authors and Affiliations

  1. Departamento de Fìsica, Instituto de Matemática e Fìsica, Universidade Federal de Goiás, C.p. 131, 74000 Goiânia, Goiás, Brazil

    Francisco A. P. Osório

  2. Departamento de Física e Ciência dos Materials, Instituto de Fìsica e Quìmica de São Carlos, 13560-970, S.P., Brazil

    Oscar HipóLito

  3. Department of Physics, University of Antwerp (U.I.A.), B-2610, Antwerpen, Belgium

    Francois M. Peeters

Authors
  1. Francisco A. P. Osório
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  2. Oscar HipóLito
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  3. Francois M. Peeters
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Osório, F.A.P., HipóLito, O. & Peeters, F.M. Effects of Confinement on Shallow Impurities in GaAs-Ga1-xA1xAs Quantum Dots. MRS Online Proceedings Library 281, 79–84 (1992). https://doi.org/10.1557/PROC-281-79

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  • DOI: https://doi.org/10.1557/PROC-281-79

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