Electron Channelling Contrast Imaging (ECCI) of Dislocations in Bulk Specimens

MRS Online Proceedings Library volume 209, pages289–292(1990)Cite this article

Abstract

Dislocations have been imaged in bulk specimens of Si using a FEG SEM operating at 30keV and 100keV, without using an energy filter, but by image processing of the back scattered electron signal collected by a highly efficient detector. The dislocation contrast is greater at 30 keV than at 10OkeV. Ilowever, the depth to which useful information may be obtained is greater at 1O0keV (∼210nm) than at 3OkeV (∼95nm). The final depth to which dislocations can be imaged is strongly dependent on image processing conditions.

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Acknowledgement

SERC are thanked for funding and for a Research Fellowship to one of us (JTC). T.Fell prepared the silicon sample and J. Stead helped with the construction of the detector.

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Affiliations

  1. Department of Materials, University of Oxford, Oxford OX1 3PH, UK

    J. T. Czernuszka, N. J. Long & P. B. Hirsch

  2. El Dupont de Nemours, Central Research and Development Department, Wilmington, DE, 19880-0356, USA

    E. D. Boyes

Authors
  1. J. T. Czernuszka
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  2. N. J. Long
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  3. E. D. Boyes
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  4. P. B. Hirsch
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Correspondence to J. T. Czernuszka.

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Czernuszka, J.T., Long, N.J., Boyes, E.D. et al. Electron Channelling Contrast Imaging (ECCI) of Dislocations in Bulk Specimens. MRS Online Proceedings Library 209, 289–292 (1990). https://doi.org/10.1557/PROC-209-289

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