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Deposition of a-Ge:H in a Remote Plasma System

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Abstract

The remote plasma deposition process was studied by optical emission spectroscopy using Ne and N2 to detect He-metastables. a- Ge:H was prepared and its optoelectronic and structural properties were characterized. AM 1.5 photoconductivities around 10−6(Ωcm)−1 were obtained in intrinsic material with the Fermi level position lying near midgap. However, even in the best film the defect density is higher than 1017cm−3.

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Acknowledgement

The authors like to thank H.C. Weller, M.B. Schubert and A.-J. Okonnek for making the work easy going. This work has been supported by BMFT contr. no. 032 8327-D.

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Authors and Affiliations

  1. Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000, Stuttgart-80, Germany

    M. Heintze, C. E. Nebel & G. H. Bauer

Authors
  1. M. Heintze
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  2. C. E. Nebel
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  3. G. H. Bauer
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Heintze, M., Nebel, C.E. & Bauer, G.H. Deposition of a-Ge:H in a Remote Plasma System. MRS Online Proceedings Library 192, 565–570 (1990). https://doi.org/10.1557/PROC-192-565

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  • DOI: https://doi.org/10.1557/PROC-192-565

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