In-Situ Preparation and Characterization of Superconducting Thin Films and Related Materials by Mocvd for the Development of Three Terminal Switching Devices

MRS Online Proceedings Library volume 169, pages1129–1132(1989)Cite this article

Abstract

Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the fabrication of high temperature superconductor devices. In this paper, we present preliminary results of in-situ deposition of Y-Ba-Cu-0 thin films (Tc = 79K) by rapid isothermal processing assisted MOCVD on BaF2/silicon substrates.

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References

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    R. Singh, S. Sinha, P. Chou, N. J. Hsu, F. Radpour, H. S. Ullal, and A. J. Nelson, J. App. Phys. 66, 6179 (1989).

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    R. Singh, R. P. S. Thakur, A. Kumar, P. Chou, and J. Narayan, Appl. Phys. Lett. 56, 247 (1990).

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Affiliations

  1. School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK, 73019, USA

    R. Singh, S. Sinha & J. Narayan

  2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7916, USA

    J. Narayan

Authors
  1. R. Singh
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  2. S. Sinha
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  3. J. Narayan
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Correspondence to R. Singh.

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Singh, R., Sinha, S. & Narayan, J. In-Situ Preparation and Characterization of Superconducting Thin Films and Related Materials by Mocvd for the Development of Three Terminal Switching Devices. MRS Online Proceedings Library 169, 1129–1132 (1989). https://doi.org/10.1557/PROC-169-1129

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