Abstract
La-doped ZrO2 thin films were grown by O3-based atomic layer deposition on III-V (GaAs, In0.15Ga0.85As) substrates. The direct oxide deposition and the insertion of a Ge passivation layer in between the oxide and the substrate are compared in terms of the resulting density of interface traps. An improved electrical quality of the Ge-passivated interfaces concerning the energy region close to the conduction band edge in the semiconductor band-gap is demonstrated through conductance maps at various temperatures and it is attributed to Ga-related interfacial defects.
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Molle, A., Brammertz, G., Lamagna, L. et al. Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substrates. MRS Online Proceedings Library 1194, 80–88 (2009). https://doi.org/10.1557/PROC-1194-A08-10
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DOI: https://doi.org/10.1557/PROC-1194-A08-10