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Sputtering yield measurements with size-selected gas cluster ion beams

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Abstract

Ar cluster ions in the size range 1000-16000 atoms/cluster were irradiated onto Si substrates at incident energies of 10 and 20 keV and the sputtering yields were measured. Incident cluster ions were size-selected by using the time-of-flight (TOF) method. The sputtering yield was calculated from the sputtered Si volume and irradiation dose. It was found that the sputtering yields decreased with increasing incident cluster size under the same incident energy conditions. The integrated sputtering yields calculated from the sputtering yields measured for each size of Ar cluster ions, as well as the cluster size distributions, were in good agreement with experimental results obtained with nonselected Ar cluster ion beams.

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Authors and Affiliations

  1. Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto, Japan

    Kazuya Ichiki, Toshio Seki & Jiro Matsuo

  2. Quantum Science and Engineering Center, Kyoto University, Uji, Kyoto, Japan

    Satoshi Ninomiya

  3. Department of Electronic Science and Engineering, Kyoto University, Nishikyo, Kyoto, Japan

    Takaaki Aoki

  4. CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo, Japan

    Toshio Seki, Takaaki Aoki & Jiro Matsuo

Authors
  1. Kazuya Ichiki
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  2. Satoshi Ninomiya
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  3. Toshio Seki
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  4. Takaaki Aoki
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  5. Jiro Matsuo
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Correspondence to Kazuya Ichiki.

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Ichiki, K., Ninomiya, S., Seki, T. et al. Sputtering yield measurements with size-selected gas cluster ion beams. MRS Online Proceedings Library 1181, 150–155 (2009). https://doi.org/10.1557/PROC-1181-DD13-25

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  • DOI: https://doi.org/10.1557/PROC-1181-DD13-25

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