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Localized Gallium Doping and Cryogenic Deep Reactive Ion etching in Fabrication of Silicon Nanostructures

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Abstract

We present a novel fabrication method to create controlled 3-dimensional silicon nanostructures with the lateral dimensions that are less than 50 nm as a result of a rapid clean room compatible process. We also demonstrate periodic and nonperiodic lattices of nanopillars in predetermined positions with the minimum pitch of 100 nm. One of the uses of this process is to fabricate suspended silicon nanowhiskers.

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Acknowledgments

Nikolai Chekurov acknowledges Magnus Ehrnrooths foundation for financial support.

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Authors and Affiliations

  1. Department of Micro and Nanosciences, Helsinki University of Technology, PO Box 3500, FIN-02015 TKK, Finland

    Nikolai Chekurov, Kestutis Grigoras, Antti Peltonen, Sami Franssila & Ilkka Tittonen

  2. Center for New Materials, Helsinki University of Technology, PO Box 3500, FI-02015 TKK, Finland

    Nikolai Chekurov, Kestutis Grigoras, Sami Franssila & Ilkka Tittonen

  3. TKK Micronova, Helsinki University of Technology, PO Box 3500, FI-02015 TKK, Finland

    Antti Peltonen

Authors
  1. Nikolai Chekurov
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  2. Kestutis Grigoras
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  3. Antti Peltonen
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  4. Sami Franssila
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  5. Ilkka Tittonen
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Chekurov, N., Grigoras, K., Peltonen, A. et al. Localized Gallium Doping and Cryogenic Deep Reactive Ion etching in Fabrication of Silicon Nanostructures. MRS Online Proceedings Library 1181, 84–89 (2009). https://doi.org/10.1557/PROC-1181-DD07-01

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  • DOI: https://doi.org/10.1557/PROC-1181-DD07-01

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