Abstract
Thin films of tin sulfide (SnS) were deposited on TCO-coated glass substrates by pulse electrodeposition. Cyclic voltammetry showed that SnS deposition occurs in the -0.8 V to −1 V range. The films deposited using the potential pulses of -0.95V (Von) and +0.1V (Voff) are of orthorhombic crystal structure with lattice parameters and grain size similar to those of the thin films of orthorhombic structure obtained by chemical deposition. The optical band gap of the films was 1.3 eV. In CdS/SnS heterojunctions an open circuit voltage110 mV, short circuit current density 0.72 mA/cm2 and fill factor of 0.32 are reported here.
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References
Shuying Cheng, Yanqing Chen Yingjie He, Gionan Chen, et al, Mater. Lett. 61, 1408 (2007).
David Avellaneda, M. T. S. Nair, P. K. Nair, J. Electrochem. Soc. 155, 517 (2008).
N. Koteswara Reddy, K .T. R. Reddy, G. Fisher, R. Best, P. K Dutta, J. Phys. D: Appl. Phys. 32, 988 (1999).
Sekar C. Ray et al Thin solid Films 350 (1999)72–78
G.H Yue, D.L Peng, P.X Yan, L.S Wang, W.Wang, X.H Luo J. Alloys and Compd. 468, 254 (2009).
Naoya Sato, Masaya Ichimura, Eisuke Arai, Yoshihisa Yamazaki, Sol. Energy Mater. & Sol. Cells 85, 153 (2005).
K. T. R. Reddy, N. K. Reddy, R.W Miles, Sol. Energy Mater. Sol. Cells, 90, 3041 (2006).
M. Gunasekaran, M. Ichimura, Sol. Energy Mater. & Sol. Cells 91, 774 (2007).
D. Avellaneda, M.T.S. Nair, P.K. Nair, Thin Solid Films 51, 2500 (2009).
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Mathews, N.R., Avellaneda, D., Anaya, H.B.M. et al. Chemically and electrochemically deposited thin films of tin sulfide for photovoltaic structures. MRS Online Proceedings Library 1165, 835 (2009). https://doi.org/10.1557/PROC-1165-M08-35
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DOI: https://doi.org/10.1557/PROC-1165-M08-35