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Current Transport in Cu(In,Ga)S2 Based Solar Cells with High Open Circuit Voltage -Bulk vs. Interface

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Abstract

Cu(In,Ga)S2 thin films prepared by rapid thermal sulfurization of metallic precursors yielded solar cells with efficiencies reaching 12.9% [1]. A good short circuit current density was observed together with open circuit voltages up to 850 mV. However, the fill factor was close to, but typically did not exceed 70%. In this contribution we report on the role of junction formation by chemical bath deposition on these parameters. Concentrations in the bath and deposition times were varied. A comparison is made between CdS and Zn(S,O) buffer layers. The influence of the incorporated gallium on surface properties was investigated by ultraviolet photoelectron spectroscopy (UPS) for the valence band edge and near edge X-ray absorption fine structure (NEXAFS) for the conduction band edge. Even in our best cell (13.1%) the activation energy of the saturation current is found to be still smaller than the band gap. High diode ideality factors and voltage dependent current collection prevent higher fill factors.

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Authors and Affiliations

  1. Helmholtz-Zentrum-Berlin, Glienickerstr. 100, Berlin, D14109, Germany

    Saoussen Merdes, Benjamin Johnson, Rodrigo Sáez-Araoz, Ahmed Ennaoui, Joachim Klaer, Iver Lauermann, Roland Mainz & Reiner Klenk

  2. Sulfurcell Solartechnik GmbH, Barbara-McClintock-Str. 11, Berlin, D12489, Germany

    Alexander Meeder

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  1. Saoussen Merdes
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  2. Benjamin Johnson
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  3. Rodrigo Sáez-Araoz
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  4. Ahmed Ennaoui
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  5. Joachim Klaer
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  6. Iver Lauermann
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  7. Roland Mainz
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  8. Alexander Meeder
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  9. Reiner Klenk
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Merdes, S., Johnson, B., Sáez-Araoz, R. et al. Current Transport in Cu(In,Ga)S2 Based Solar Cells with High Open Circuit Voltage -Bulk vs. Interface. MRS Online Proceedings Library 1165, 515 (2009). https://doi.org/10.1557/PROC-1165-M05-15

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  • DOI: https://doi.org/10.1557/PROC-1165-M05-15

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