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Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices

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Abstract

In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 6×100mm wafers per run. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm runs will be shown and compared to results of the former 7×3? setup. The characteristic of the run-to-run reproducibility for the 6×100mm setup will be discussed. To demonstrate the suitability of the reactor for device production results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3?, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.

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References

  1. A.A. Burk, M.J. O’Loughlin, M.J. Paisley, A.R. Powell, M.F. Brady, R.T. Leonhard, and D.A. McClure, Mat. Sci. Forum 527-529, 159 (2006).

    Article  CAS  Google Scholar 

  2. B. Thomas, C. Hecht, R. Stein, and P. Friedrichs, Mater. Sci. Forum 527-529, 135 (2006).

    Article  CAS  Google Scholar 

  3. C. Hecht, B. Thomas, and W. Bartsch, Mater. Sci. Forum 527-529, 239 (2006).

    Article  CAS  Google Scholar 

  4. B. Thomas, C. Hecht, R. Stein, and P. Friedrichs, Mater. Res. Soc. Symp. Proc. 911, 37 (2006).

    Article  CAS  Google Scholar 

  5. B. Thomas and C. Hecht, Mater. Sci. Forum 483-485, 141 (2005).

    Article  CAS  Google Scholar 

  6. J. Zhang, U. Forsberg, M. Isacson, A. Ellison, A. Henry, O. Kordina, and E. Janzen, J. Cryst. Growth 241, 431 (2002).

    Article  CAS  Google Scholar 

  7. C. Hecht, B. Thomas, R. Stein, and P. Friedrichs, presented at ICSCRM 2007, Otsu, Japan (2007) (in press).

    Google Scholar 

  8. J.P. Bergman, H. Lendenmann, P.A. Nilsson, U. Lindefelt, and P. Skytt, Mat. Sci. Forum 353-356, 299 (2001).

    Article  CAS  Google Scholar 

  9. J.J. Sumakeris, M.K. Das, S. Ha, E. Hurt, K. Irvine, M.J. Paisley, M.J. O´Loughlin, J.W. Palmour, M. Skowronski, H. McD. Hobgood, and C. H. Carter Jr., Mat. Sci. Forum 483-485, 155 (2005).

    Article  CAS  Google Scholar 

  10. J.J. Sumakeris, J.P. Bergman, M.K. Das, C. Hallin, B.A. Hull, E. Janzen, H. Lendenmann, M.J. O´Loughlin, M.J. Paisley, S. Ha, M. Skowronski, J.W. Palmour, and C. H. Carter Jr., Mater. Sci. Forum 527-529, 141 (2006).

    Article  CAS  Google Scholar 

  11. B. Kallinger, B. Thomas, and J. Friedrich, presented at ICSCRM 2007, Otsu, Japan (2007) (in press).

    Google Scholar 

  12. W. Bartsch, B. Thomas, H. Mitlehner, B. Bloecher, and S. Gediga, presented at EPE 2007, Aalborg, Danmark, (2007) (in press).

    Google Scholar 

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Authors and Affiliations

  1. SiCED Electronics Development GmbH & Co. KG, Guenther-Scharowsky-Strasse 1, D-91058, Erlangen, Germany

    Christian Hecht, Bernd Thomas, Rene Stein & Peter Friedrichs

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  1. Christian Hecht
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  2. Bernd Thomas
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  3. Rene Stein
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  4. Peter Friedrichs
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Hecht, C., Thomas, B., Stein, R. et al. Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices. MRS Online Proceedings Library 1069, 10690404 (2007). https://doi.org/10.1557/PROC-1069-D04-04

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  • DOI: https://doi.org/10.1557/PROC-1069-D04-04

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