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Role of Charge Interaction in the Behavior of Organic Thin Film Transistors

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Abstract

Strong hysteresis in the I-V characteristics of organic thin film transistors are a severe obstacle for the implementation of large circuits. It therefore is a key success factor for the optimization and widespread application of organic electronics to understand the underlying principles. We report the fabrication of two types of pentacene transistors with either polyvinyl alcohol (PVA) or SiO2 as gate dielectric. These devices respond to transient measurement sweeps with a fundamentally different I-V hysteresis. A self-contained model is presented, which associates this behavior with the influence of traps at the SiO2/pentacene interface and polarization in the PVA layer. Simulations employing the commercial drift-diffusion tool SENTAURUSTM are performed to verify our models.

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Authors and Affiliations

  1. Institute for Nanoelectronics, Technische Universitaet Muenchen, Munich, Germany

    Christoph Erlen, Francesca Brunetti, Giuseppe Scarpa & Paolo Lugli

  2. University of Rome “Tor Vergata”, Rome, Italy

    Francesca Brunetti & Aldo Di Carlo

  3. Ludwig-Maximilians-Universitaet, Munich, Germany

    Matthias Fiebig & Bert Nickel

Authors
  1. Christoph Erlen
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  2. Francesca Brunetti
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  3. Matthias Fiebig
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  4. Giuseppe Scarpa
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  5. Bert Nickel
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  6. Aldo Di Carlo
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  7. Paolo Lugli
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Erlen, C., Brunetti, F., Fiebig, M. et al. Role of Charge Interaction in the Behavior of Organic Thin Film Transistors. MRS Online Proceedings Library 1003, 1110 (2007). https://doi.org/10.1557/PROC-1003-O11-10

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  • DOI: https://doi.org/10.1557/PROC-1003-O11-10

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