Millisecond Duration Annealing of Boron Implants in Silicon


A dual electron beam machine has been used to anneal boron implanted layers in order to study the diffusion and activation behaviour over a wide range of doses. The annealed implants have been characterized by spreading resistance profiling and secondary ion mass spectroscopy (SIMS). Carrier concentration profiles show that millisecond duration anneals can activate boron implants. A boron dose of 1E16 ions/cm2 was annealed to give a sheet resistance of 30 Ωsq with 40% of the implant activated. The SIMS technique showed there were no significant differences between the atomic profiles of the as-implanted samples and specimens subjected to a millisecond anneal or to a low temperature 850°C rapid isothermal anneal for 10s.

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  1. (1)

    T.O.Sedgwick, J.Electrochem.Soc 130,p.484 (1983)

    CAS  Article  Google Scholar 

  2. (2)

    R.A.McMahon and H.Ahmed, "Electron beam annealing of ion implanted silicon," Electron. Lett., vol.15, pp45–47, 1979

    CAS  Article  Google Scholar 

  3. (3)

    C.Hill, Mat. Res. Soc. Symp. Proc. 1, 361, 1981, (North Holland,New York).

    Google Scholar 

  4. (4)

    R.A.McMahon, D.G.Hasko, H.Ahmed, W.M.Stobbs and D.J.Godfrey, Mat. Res. Soc. Symp. Proc. 35,347, 1985, (North Holland, New York).

    Google Scholar 

  5. (5)

    T.Yu, K.J. Soda, B.C.Streetman, J. Appl. Phys.51,p.4399 (1980)

    CAS  Article  Google Scholar 

  6. (6)

    T.E. Seidel and A.U.MacRae, Proc. 1st Int. Conf. on Implantation in Semiconductors, Thousand Oaks, CA (Gordon and Breach, New York, 1970)

    Google Scholar 

  7. (7)

    T.O.Sedgwick, Proc.Electrochem. Soc. 82(7), 130 (1982)

    Google Scholar 

  8. (8)

    R.T.Hodgson, V.R.Deline, S.Mader and J.C.Gelpey Appl. Phys.Lett. 44(6), p.489,15 March 1984

    Article  Google Scholar 

  9. (9)

    L.Cspregi, E.F.Kennedy, T.J.Gallagher, J.W. Mayer and T.W.Sigmon, J.Appl.Phys., 48,p.4234,(1977)

    Article  Google Scholar 

  10. (10)

    P.H.Tsein, J.Gotzlich, H.Ryssel and I.Ruge, J.Appl. Phys, Vol 53(1), p.663,1982

    Article  Google Scholar 

  11. (11)

    D.Fan, J.Huang, R.J.Jaccodine, P.Kahora and F.Stevie, Appl.Phys.Lett. 50(24),p.1745,1987

    CAS  Article  Google Scholar 

  12. (12)

    A.E.Michel, W.Rausch ,P.A.Ronsheim and R.R.Kastl Appl.Phys.Lett.50(7),p.416,1987

    CAS  Article  Google Scholar 

  13. (13)

    A.E.Michel, W.Rausch and P.A.Ronsheim, Appl.Phys Lett 51(7),17 August 1987

    Article  Google Scholar 

  14. (14)

    F.F.Morehead and R.F.Lever Appl.Phys.Lett 48(2),p.151,1986

    CAS  Article  Google Scholar 

  15. (15)

    K.Cho,M.Numan,T.G.Finstad, W.K.Chu, J.Liu and J.J.Wortman, Appl.Phys.Lett. 47(12),p.1321,1985

    CAS  Article  Google Scholar 

  16. (16)

    D.J.Godfrey, R.D.Groves, M.G.Dowsett and A.F.W.Willoughby, Physica B, Vol.129,p181,1985

    CAS  Article  Google Scholar 

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Correspondence to D. A. Smith.

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Smith, D.A., McMahon, R.A., Ahmed, H. et al. Millisecond Duration Annealing of Boron Implants in Silicon. MRS Online Proceedings Library 100, 725 (1987).

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