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Boron Doping Effects in Microcrystalline Silicon

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Abstract

Conditions leading to high conductivities (up to 300 S/cm) in chlorosilane-based boron-doped microcrystalline Si:Cl:H films are investigated. It is found that the high conductivity originates primarily from the growth of highly crystalline material with a high concentration of boron. Furthermore, these films grow with relatively low chlorine and hydrogen concentrations of a few percent and, according to effusion measurements of hydrogen and implanted helium, in a relatively compact structure. At a boron doping level of 1%, admixture of 10% silane to the tetrachlorosilane results in the growth of amorphous material of low conductivity while for admixture of up to 90% of silicontetrafluoride, microcrystalline Si films with high conductivities can be grown.

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Authors and Affiliations

  1. IEF-5 Photovoltaik, Forschungszentrum Jülich GmbH, Leo Brandt Strasse, 52425, Jülich, Germany

    Wolfhard Beyer, Lars Niessen & Frank Pennartz

Authors
  1. Wolfhard Beyer
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  2. Lars Niessen
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  3. Frank Pennartz
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Beyer, W., Niessen, L. & Pennartz, F. Boron Doping Effects in Microcrystalline Silicon. MRS Online Proceedings Library 989, 707 (2006). https://doi.org/10.1557/PROC-0989-A07-07

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  • DOI: https://doi.org/10.1557/PROC-0989-A07-07

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