Nickel silicide is promising to be the choice material as contact to the source, drain, and gate for sub-65 nm and 45 nm CMOS devices. However, the thermal stability of NiSi is worse as the high resistivity phase of NiSi2 nucleates at about 750 °C and film agglomeration occurs even at a temperature as low as 600 °C. The process integration issues and formation thermally stable NiSi are needed to be understood and addressed. In order to obtain a thermally stable Ni-FUSI gate electrode, we introduced a novel integration process by using a two-step anneal process associating with properly tuned thickness of the initial Ni film and implant BF2 atoms during the poly-gate formation. As results, push the transformation of NiSi2 to a higher temperatures at about 900 °C. Several measurement techniques such as XRD, TEM, SEM and Resistivity are carried out to demonstrate its physical and electrical properties.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
The International Technology Roadmap for Semiconductors, 2005.
C.Hobbs et al., VLSI Symp. Tech. Dig., p. 9(2003).
K. Shiraishi et al., VLSI Symp. Tech. Dig., p. 108(2004).
H. Iwai, T. Ohgura, S. Ohmi, Microelectron. Eng. 60 (2002) 157.
A. Hokazono, K. Ohuchi, M. Takayanagi, Y. Watanabe, S. Magoshi, Y. Kato, T. Shimizu, et al., IEDM Tech. Dig. (2002) 639.
J.P. Lu, D. Miles, J. Zhao, A. Gurba, Y. Xu, C. Lin, M. Hewson, et al., IEDM Tech. Dig. (2002) 371.
A. Lauwers, A. Steegen, M. de potter, R. Lindsay, A. Satta, H. Bender, K. Maex, J. Vac. Sci. Technol., B 19 (2001) 2026.
A. Lauwers, M. de Potter, O. Chamirian, R. Lindsay, C. Demeurisse, C. Vrancken, K. Maex, Microelectron. Eng. 64 (2002) 131.
K.L Pey, P.S. Lee, D. Mangelinck, Thin Solid Films 462–463 (2004) 137.
A.S. Wang, D.Z. Chi, M. Loomans, D. Ma, M.Y. Lai, W.C. Tjiu, S.J. Chua, Appl. Phys. Lett. 81 (2002) 5138.
F. Heurle, C.S. Petersson, J.E.E. Baglin, S.J. Placa, C.Y. Wong, J. Appl. Phys. 55 (1984) 4208.
J.A. Kittl, A. Lauwers, O. Chamirian, M.A. Pawlak, M. Van Dal, A. Akheyar, M. De Potter, A. Kottantharayil, G. Pourtois, R. Lindsay, K. Maex, Mater. Res. Soc., Symp. Proc. 810 (2004) 31.
C. Lavoie, F.M. d’Heurle, C. Detavernier, C. Cabral Jr., Microelectron. Eng. 70 (2003) 144.
J.A. Kittl, A. Lauwers, M.A. Pawlak, M. Van Dal, A. Veloso, K.G. Anil, G. Pourtois, C. Demeurisse, T. Schram, B. Brijs, M. De Potter, C. Vrancken, K. Maex, Microelectron. Eng. 82 (2005) 441.
About this article
Cite this article
Tan, S.Y., Chiu, HC. & Hu, CY. Formation of a Thermally Stable NiSi FUSI Gate Electrode by a Novel Integration Process. MRS Online Proceedings Library 958, 608 (2006). https://doi.org/10.1557/PROC-0958-L06-08