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Spin Relaxation in SiGe Islands

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Abstract

We present our work on the spin relaxation of electrons confined in SiGe islands. Ge islands are grown on unstructured and structured Si(100) substrates by MBE, and lead to strain in the Si layer that is deposited on top. These quantum dot structures are investigated by photoluminescence and electron spin resonance (ESR) experiments, the latter both in continuous wave and pulsed mode. We observe a g-factor and an ESR line width that correspond to Si conduction band electrons with additional inhomogeneous broadening.

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Authors and Affiliations

  1. Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69, Linz, 4040, Austria

    Hans Malissa, Wolfgang Jantsch, Gang Chen, Herbert Lichtenberger, Thomas Fromherz, Friedrich Schäffler & Günther Bauer

  2. Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

    Alexei Tyryshkin & Stephen Lyon

  3. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland

    Zbyslaw Wilamowski

Authors
  1. Hans Malissa
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  2. Wolfgang Jantsch
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  3. Gang Chen
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  4. Herbert Lichtenberger
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  5. Thomas Fromherz
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  6. Friedrich Schäffler
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  7. Günther Bauer
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  8. Alexei Tyryshkin
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  9. Stephen Lyon
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  10. Zbyslaw Wilamowski
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Malissa, H., Jantsch, W., Chen, G. et al. Spin Relaxation in SiGe Islands. MRS Online Proceedings Library 958, 304 (2006). https://doi.org/10.1557/PROC-0958-L03-04

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  • DOI: https://doi.org/10.1557/PROC-0958-L03-04

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