Abstract
A simple thermal annealing was performed to prepare tungsten oxide nanorods directly from tungsten (W) film. The W film was deposited on Si(100) substrate by chemical vapor deposition (CVD) at 450 °C using W(CO)6. A high density of tungsten oxide nanorods was produced by heating of the W film at 600–700 °C. The morphology, structure, composition, and chemical binding states of the prepared nanorods were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) analysis. XRD and TEM results showed that the grown nanorods were single-crystalline W18O49. According to XPS analysis, the W18O49 nanorods contained ∼55.69% W6+, ∼32.28% W5+, and ∼12.03% W4+. The growth mechanism based on thermodynamics is discussed for the growth of tungsten oxide nanorods from W film.
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Acknowledgments
This work was supported by the Korean Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-005-J13101) and Grant No. RTI04-01-04 from the Regional Technology Innovation Program of the Ministry of Commerce, Industry and Energy (MOCIE).
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Jeon, S., Yong, K. Synthesis and characterization of tungsten oxide nanorods from chemical vapor deposition-grown tungsten film by low-temperature thermal annealing. Journal of Materials Research 23, 1320–1326 (2008). https://doi.org/10.1557/JMR.2008.0158
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DOI: https://doi.org/10.1557/JMR.2008.0158